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This watermark defect is invisible right after grinding step and appears after reactive ion etching RIE step. It is necessary to remove the watermark and contaminants from the post-grind Si surface. The control of the wettabil- ity of post-grind surface and post-CMP cleaning method plays an important role on the removal of particles and watermarks from Si surface. These edge defects and particles are easily transferred to polished silicon surface during subsequent process steps, for example, RIE, chemical vapor deposi- tion CVD , or wafer transport steps.

Foreign material a could come from. Etch by-product b is the in-process particle. Hard mask defect c can originate from pre- etch defects that act as Si hard mask. Wafer edge or bevel area is a primary source of yield lowering defects. Therefore the cleanliness at wafer edge top and bevel is crucial for yield enhancement.

In order to see the impact of bevel clean in single RIE etch step, different bevel clean- ing methods prior to RIE etch-back step were evaluated. The minor fall- on particles shown in Figure 3. It becomes much worse with over- recessed TSV tip height or pillar height , which is more likely to occur at wafer edge. In order to enhance TSV tip height uniformity after RIE step, gradi- ent Si etch rate across the wafer is applied to compensate for the thickness. It proves that TSV tip height variation across wafer center to edge is uniform and oxide liner loss is little on top of exposed TSV tip.

Each 3D-IC test chip consists of four top dies on an interposer Figure 3. Constrained by resources in this TV, the top die could not be probed at wafer level to check the yield. However, the physical failure analysis FA feedback loop takes longer time to identify the failure site from the long chain. After e-test at chip level, x-ray and confocal scanning acoustic micros- copy C-SAM detection are the frequently used constructive inspection approaches to validate the test results, in particular failing or delamination locations. Bali top die Microbump Interposer C4 bump Interposer.

C-SAM Confocal scanning acoustic microscopy. TDR Time domain reflectometry. In fact the TV helped with choosing chip-on-wafer CoW as the preferred assembly integration platform Figure 3. Xilinx has been using DMV for many generations due to its rapid defect detection capability and accuracy.

UF UF. Full thickness wafer Cavity-handling wafer. Organic substrate Concave warpage. Board-level reliability BLR of package is another important aspect to con- sider from a system-use perspective. Top die die seal ring. Traditionally, per IPC, BGA solder balls are monitored through daisy chains in both package peripheral and under die perimeter areas. To achieve this purpose, top die was redesigned, inter- poser and substrate from the original component package, as shown in Figure 3.

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The package was assembled on a BLR board and tested with and without heat sink. It has 28 metal layers with high-speed, low-loss dielectric material. Board design, assembly, and test are based on IPC First failure without heat sink occurred at cycles and characteristic life Dye and pry FA on the first failed unit indicated the failure was caused by solder ball crack at pack- age corner ball, as shown in Figure 3.

This agreed with simulation that the X-interposer package has similar BLR characteristic as a large die flip chip package where corner balls fail early and should be. Including heat sink, onset of first failure was sooner at cycles and characteristic life was reached at cycles. The package was also assembled on a Shock and Bend board and tested without heat sink. It has 16 metal layers with high-speed, low-loss dielectric material. These reliability assess- ments are especially important during 3D-IC development.

Xilinx has built-in test capability, thus its 3D-IC top dies are fully tested at wafer level, similar to their monolithic dies done normally. However it is more challenge to do built-in test in passive silicon interposer KGD. A new approach connects the power and ground network in the interposer die into a giant open-short test network in scribe area enabling almost KGD test capability. In addition to design for testability DFT , redundancy and self-repairing schemes have also been developed [14].

The C4 bridging caused by warpage of the CoW at corners of the interposer was then eliminated. Comprehensive reliability tests well beyond JEDEC have been conducted to understand new failure modes and solutions. All of these are due to an effective test vehicle and development strategy. The C4 bridging was eliminated after dummy dies included in CoW integration b. One reason is because 3D-IC technology is reaching maturity, whereas other driving forces and advanced silicon technology continuous scaling trend are becoming more challenging and more expensive.

Handbook of 3D Integration | Wiley Online Books

The challenges expected and which the industry should resolve soon to penetrate high-volume mainstream adoption are given in the following:. The cost-down tendency and margin of the 3D-IC: It will become a key factor to promote 3D-IC adoption by new markets other than emula- tion, hyperscale data center, and networking. More capacity investment is pursued by foundry and OSATs but the pace needs to accelerate.

In the future with advanced silicon technology scaling only becoming more chal- lenging not only from technical but an economic standpoint, it is expected that 3D vertical stacking would gain more interest and momentum in the industry. Particular thanks go to our management team for their full commitment and support right throughout the program. Madden, E. Wu, N. Kim, B. Banijamali, K. Abugharbieh, S. Ramalingam, and X.

Erdmann, D. Lowney, A. Lynam, A. Keady, J. McGrath, E. Cullen, D. Wu, J. Wei, and H. Wu, D. Kim, A. Rahman, and P. Carrel, J. Kim, and P. Banijamali, S. Ramalingam, K. Nagarajan, and R. Banijamali, H.

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Liu, S. Ramalingam, I. Barber, T. Lee, J. Chang, M. Kim, and L. Hariharan, L. Yip, R. Chaware, I. Singh, M. Shen, K. Ng, and A. Chaware, G. Hariharan, J. Lin, I. Singh, G. Ng, and S. Kwon, M. Kim, J. Chang, S. Ramalingam, L. Madden, G. Tsai, S. Tseng, J.

Lai, T. Lu, and S. Camarota, J. Wong, H. Liu, and P. In addition to these 3D-stacked DRAM and 3D-stacked image sensor, heterogeneous 3D integration technology has increasingly attracted much attention as it is indispensable for future Internet of Things IoT. In a heterogeneous 3D integration technology, different kinds of chips such as microelectromechanical systems MEMS , sensor, photonic device chip, and spintronic device are stacked on CMOS chips.

Low-power consumption, small form factor, and multifunctionality are required for embedded devices in IoT. Heterogeneous 3D integration can provide these embedded devices with low-power consumption, small form factor, and multifunctionality. We have developed new heterogeneous 3D integration and system integration technologies using self-assembly.

In this chapter, these new heterogeneous 3D integration and system integration technologies for IoT are described. In this 3D LSI process, an LSI wafer is glued to a sup- porting material and then the LSI wafer is thinned from the back surface by mechanical grinding and polishing to a thickness of approximately 0. We have developed four kinds of TSVs so far as shown in Figure 4.

Furthermore we fabricated a 3D-stacked memory in , 3D-stacked artificial retina chip in , and 3D-stacked processor in using poly-Si TSV [11—13]. Challenges in 3D Integration Parallel processing P C. Configuration of block paralled 3D-stacked image sensor Quartz class Si interposer Stacked chips. Photo of 3D-stacked image sensor. A typical example of these intelligent system modules is a 3D-stacked image sensor system module for advanced driver assistance systems ADAS as shown in Figure 4.

We have employed a block-parallel architecture for ADC to convert a large amount of analog data from image sensors to digital data with high speed. Si interposer 3D-stacked processor. Correlated double Correlated Pixel No. Figure 4. We confirmed the successful operation of fabricated prototype 3D-stacked image sensor. A prototype 3D-stacked dependable multicore processor was fabricated by the 3D integration technology with the backside-via [22—23]. Cu TSV M1. Si Sub. Vertical bus using TSVs. A circuit block diagram and a die photo of core processor fabricated by a standard nm 1-Poly 9-Metal CMOS technology are shown in Figure 4.

We fabricated a four-layer stacked multicore processor and a four-layer stacked cache memory. It is clearly seen in the figure that the stacked structure with many TSVs is successfully formed. We confirmed using internal built-in-self-test BIST circuits that the fabricated prototype 3D-stacked multicore processor exhibited excellent characteristics [24]. Tier 1 TSV. We have developed a new 3D integration technology as shown in Figure 4. We call this new 3D integration technology a reconfigured wafer-to-wafer R-W2W 3D integration technol- ogy [25—27]. First layer chip Target interposer wafer. Water droplet Wafer.

Hydrophilic areas and hydrophobic areas are formed on the surface of wafer or chip.

Graphene Computing & 3D Integrated Circuits To Increase Computing Performance

We have succeeded in simultaneously aligning five hundreds of chips with the average alignment accuracy of 0. Cu sidewall interconnection MEMS chip. Many chips KGDs with metal microbumps and nonconductive films NCFs are simultaneously face-down bonded onto the carrier wafer after self-assembly. Then these chips are simul- taneously thinned from the backside, and metal microbumps are formed on. A number of 3D-stacked LSIs can be simultaneously fabricated by repeating this sequence.

Cross-sectional photomicrograph of 3D-stacked test chip fabricated according to such a 3D integration technology is also shown in Figure 4. We have succeeded to completely fill W into the deep silicon hole with the diameter of 0. We also filled Ni into the deep silicon hole by electroless plating [33].

However, we still need Cu-TSV with larger diameter for power delivery. A completely new method will be needed to fab- ricate such a TSV with extremely small diameter. Then we propose a novel method to fabricate a fine TSV with the diameter of less than 0. Nanosized metal particles are included into copo- lymer with cylindrical structure after the phase separation of copolymers. However it is difficult to employ a conventional hybrid bonding in chip-to-chip bonding and chip-to-wafer bonding.

Si substrate Metal Insulator Supporting substrate a Copolymer.

Metal filament Cross-sectional structure of diblock TSV copolymer inside deep hole. The i-ACF film is formed by anodic oxidation of aluminum film and Cu electroplating [36]. In order to eval- uate the electrical characteristics of Cu—Cu joining bonded through the i-ACF film, we fabricated a test chip with a huge number of Cu electrodes of 4. The cross-sectional image of fabricated test chips bonded using i-ACF film is also shown in Figure 4.

Test chip and interposer chip are electrically connected by ultrahigh-density CNPs. We confirmed that all of 4. In addition, we have also developed vari- ous 3D system-on-chips and heterogeneous 3D LSIs using self-assembly and electrostatic bonding. Jeddeloh and B. Akasaka and T. Twenty years after the advent of ICs, the con- cept of three-dimensional integration 3DI was proposed. In s, packaging-based 3DI, such as chip-on-board COB and chip-on-chip COC with wire bonding, was developed to fabricate high-performance electron- ics. A typical product is a system-in-package SiP consisting of a stack of 4—5 chips for mobile applications.

Due to these two different approaches, that is, transistor- or packaging-based 3DI, some technical misunderstandings often occurred when people heard the term 3DI technology. This is obviously a 3D structure and comes from the requirements for high device performance and density. Packaging- based 3DI consists of a chip-based stack after singulation of the wafer, and many fabrication methods have been introduced leading to complication and confusion in attempts to classify 3DI technologies. In any case, attempts to apply the early generation of 3DI were delayed.

Interest in packaging-based 3DI technology using wafer-level process- ing has been increasing again. This is driven by the physical and eco- nomic limits of conventional scaling, which is no longer a main stream for the increasing demands for device performance, system form factor, and total manufacturing cost. To discuss 3D and to compare chip-based packaging, utilizing wafers for IC manufacturing was a significant difference and it made it easy to increase production volumes. Thus, scaling and wafer processing are the key factors for improving perfor- mance, shrinking chip size, and reducing costs, simultaneously.

Although chip-based manufacturing has an advantage in the case of small production volumes and short cycle-time from design to production, most chip-based processes, including tools and materials, were not compatible to that of wafer based and need to adjust to the specifications for volume production. Those facility trends were another reason for the delay in adaption of 3DI processes. Reducing costs requires the adoption of advanced lithography technologies, which, together with peripheral support facilities, account for one-third to one-fourth of the total cost of a manufacturing line.

In short, although useful for reducing chip size, scaling is extremely burdensome in terms of capital investment. This is a business scenario based on the empirical rule that profits are made several generations after investments, for reasons involving the tradeoffs between product sales and facility depreciation. When converted into the processing capacity of a current large- scale fabrication facility e. Based on the billion USD, total worldwide semiconductor market, this expected market size for one product and one manufacturer is not realistic.

In short, this is the limit of 2D scaling in light of the economics of the industry, and it is difficult to find a scenario of victory at present. In the case of globally intercon- necting large chips with high density, the signal traffic latency increases with an increase in the physical length L2D from block-to-block as well as logic- to-memory due to wire resistance—parasitic capacity RC delay, as shown in Figure 5.

This latency will be reduced by 3D-stacked structure when the physical length L3D through one chip to the chip below becomes shorter than L2D. Therefore, how to shrink the vertical length of 3D interconnects and how to increase their density will be key factors in developing future technology roadmaps, instead of the features of 2D scaling technology. Vertical interconnects without bump electrodes between chips, such as Cu BEOL processes, provide the lowest RC characteristics because of the.

Miniaturizing the layout using 3DI provides low-power consumption, higher bandwidth, and higher integration. Wafer-Level 3D Integration Bumpless interconnects used for the ultrathin WOW process can be formed with higher density narrower pitch compared with TSVs and bumps due to the limitations of bump size and pitch. RC reduction by no bump structure.

Figure 5. Even for stack containing two times more memory chips, the total height of the 3D memory will be a half of the height of the conventional approach. The bumpless interconnects process involves a thinning-first process before bonding wafers, followed by a via-last process, meaning that interconnects are formed after bonding the wafers, as shown in Figure 5.

This method is compatible with the BEOL, similar to multi- level metallization in which dielectric deposition using thinned wafers and. Vertical interconnects for TSVs are formed after wafer bonding from the front side. Additional wafers can be stacked on top without any limitation on the number of wafers. These modules can also be applied to chip-on-wafer COW integration.

On-chip and off-chip TSV, respec- tively, represent bumpless interconnects formed in the device area and the area around devices, including gap fill materials in COW. After wafer thinning and bonding, via-hole etching is carried out on a silicon substrate from the front surface of the wafer having the device layer and a dielectric layer for the multilevel interconnects. In the case of a heterogeneous stack using different chip sizes such as memory, logic, and passive device, COW can be used.

The development of WOW has proceeded through four modules, classified along the process flow. The modules include 1 a thinning module for thin- ning the wafer substrates in which devices are implemented, 2 a stacking module for bonding and stacking the wafers, 3 a TSV interconnects mod- ule for forming Cu interconnects embedded in upper and lower wafers with TSVs, and 4 a packaging module for singulating the stacked wafers.

Dual- damascene interconnects form RDL and also serve as a counter electrode for the subsequent stacked wafer. In our process, a wafer was bonded to a support substrate glass or silicon using a temporary bonding material, and thinning was carried out from the back side. The thinned wafer was bonded to another wafer by back-to-face bonding using a permanent bond- ing material, and then the support substrate was removed.

Thus, there is no need for high rigidity even with a thin wafer. A reduced TSV length is also considerably advantageous for data transfer and power distribution with high-energy efficiency. The small aspect ratio provided by an ultrathin wafer also has the advantage of reduc- ing stresses generated in the silicon itself, in the bottom and top Cu-TSV, and in interface regions having different CTEs. Thinning is performed by grinding Back Grind, or BG within several micrometers of the target thickness, followed by pol- ishing until the final thickness is achieved.

The thinned wafer is permanently bonded thermosetting resin to the device surface of another wafer, and then the support substrate is removed. For WOW, the wafers are aligned just before being perma- nently bonded. To ensure appropriate alignment, infrared light passing through the silicon substrate is used. Wafers to be bonded to one another in WOW are originally thin and are therefore highly transmissive. With a low-temperature bonding process and an optimized curing duration and viscosity, the average misalignment between wafers can be made as small as several micrometers as shown in Figure 5.

This is predominantly due to the bonding temperature, that is, reducing the bonding temperature pro- vides smaller misalignment. On the other hand, because any gaseous solvent.

The Damascene wiring method also enables fabrication of high-density interconnects as well as Cu intercon- nects in the BEOL, as shown in Figure 5. For TSV processing, dry etching through the dielectric device layer , Si, and adhesive layer is carried out. Reducing process time is the key for low- cost manufacturing. The barrier dielectrics at the bottom of the. Etching time min. Etching time increases with increasing depth and aspect ratio. In case of permanent adhesive formed on Cu pad after CMP,. Chain structure RDL. Chain structure shows the cross- section of Cu pad and damascene TSV for two stack wafers.

This dishing phenomenon microsurface roughness affects the next process in which Cu residue is removed by CMP in the sec- ond wafer process Figure 5. Bosch etching Direct etching 6. Leakage current A. Cracks are observed in the side walls of the TSV in the Bosch-etched sample, which had a rough interface called scalloping. With increasing tempera- ture, the leakage current increased but was two orders of magnitude higher in Bosch etching.

The scalloping causes cracks due to stress concentration in the dielec- tric layer and poor step coverage for thin films deposited by chemical vapor deposition CVD and physical vapor deposition PVD. In contrast, anisotropic direct etching resulted in a smooth surface profile along the side wall. The leakage current in Bosch etching was one order of magni- tude higher than that in direct etching. The leakage current was caused by Cu diffusion at the side wall of the TSV that took place at a thinner part of the dielectric containing cracks.

Thus, direct etching of TSVs, in other words etching that is capable of producing a smooth sidewall, is required for TSV processing. Low stress reduces Cu deformation and stress propagation to the device regions. For dicing of a seven-level wafer stack, the adhesive layer and silicon chips were found to be free of defects or delamination, as shown in Figure 5. Scanning acoustic tomography SAT was adopted for internal observation, and after up to repeated heat stress tests, no delamination was found at the interfaces between the molding compound and chips, nor at the chip stack interfaces, as shown in Figure 5.

No crack and delamination of bonding material were found. Scanning acoustic tomography image. There is a capacitor formed of. Refresh time a. There was no significant shift of switching charge within the range of the design specifications. This suggests that the thinning process developed in this study did not affect the junction leakage current, which degrades the retention time more sensitively than other leakage phenomena such as subthreshold leakage, capacitor dielectric leakage, and gate-induced drain leakage GIDL.

Wafer grinding Inclination angle 2. Adhesive 2. Adjusting chuck table angle and final grind 0. The wafer thickness uniformity after grinding was determined by the contact angle between the wheel and wafer surface [18]. Usually, the wafer was very slightly bowed after bond- ing due to elastic deformation of the temporary adhesive at the wafer edge, and this shape was also reflected in the contact angle.

By adjusting the con- tact angle to follow the geometric shape of the wafer, the TTV decreased to as low as 0. With these thinning pro- cesses, the thickness of the damaged layer, including point defects such as vacancy-type defects, was decreased from micrometer level to several nanometers when evaluated by transmission electron microscopy TEM and positron annihilation spectroscopy analyses, as shown in Figure 5. Retention degradation and yield loss within the wafer were observed at thicknesses less than 2.

The S parameter is normalized by that of Sample No. Wafer map represents Si thickness, where the average thickness and TTV were 2. Island-like Cu aggregations were observed from back surface, as shown in Figure 5. In order to. EDX Cu nm. Simulation 1. The diffusion profile based on a diffusion kinetic model, the dotted line in Figure 5. This suggests that the Cu was stable at the damaged layer at the back side of the wafer and thought to be damaged layer having point defects that act as gettering sites for Cu atoms.

As those damaged layers consisted of atomic level vacancy-type defects, these vacancy defects were substituted by Cu atoms, which led to a stable state preventing further Cu diffusion. The aspect ratio was about 1. Even with a low- aspect ratio TSV, cracks occurred at the scallop-shaped microsteps due to the Bosch process, whereas no cracks were observed in the smooth side wall processed by anisotropic direct etching. These cracks cause leakage current. Cu diffusion increases when the density of the SiON layer decreases.

In the case of a SiON layer with a relative density of 0. The point at a relative density of 0. For a relative density below 0. After seed formation at R. Crack nm nm a b. Scallop shape at the side wall and crack propagation at the SiON layer were found for Bosch etching a. No crack was observed for direct etching, even after annealing b. Density repre- sents relative value with respect to that of bulk Si3N4 3. Furthermore, the bumps themselves tend to fracture under the high-stress concentration due to a large CTE mismatch between the bumps and underfill materials.

As bumps are absent in bump- less TSVs, no delamination is observed, as shown in Figure 5. These results suggest that the induced stress increases when the thickness of the adhesive layer and aspect ratio increases. Therefore, the use of small TSVs and a thin adhesive layer, in other words, a no bump structure, provides a better solution for stress reduction.

Bumpless Cu TSV. Wafer 2. Schematic of test structure for electrical measurement: a nm Cu intercon- nects and b with multiple TSVs in two-wafer stack. There are no open failures or significant changes in the resistance distribution with the TSVs. The leakage current between TSVs blocks was as low as 2. This suggests that there was no degradation after thermal stressing.

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Si TSV. BEOL, device layer. Adhesive, c underfill. There are polymer and composite materials, such as underfill in the case of the bump interconnects and bonding adhesives in the case of bump- less interconnects. The thermal resistance Rth of the vertical interconnects and the total thermal resistance were calculated using the FEM and a ther- mal network method, respectively. Assuming a stack of eight DRAMs and one controller wafer, the thermal resistance was estimated by the follow- ing sequence: estimating the effective thermal conductivity of each layer and calculating the temperature rise using the thermal network method.

The thermal conductivities used were , Adh 0. This is due to thickness reduction of the polymer layer and bumpless structure, which has higher thermal resistance and the shortened interconnects. The total thermal resistances of a stack of eight wafers with and without bumps are estimated as shown in Figure 5.

The total thermal resistances were 1. According to these total thermal resistance values, the temperature increase in the wafer stack was estimated as shown in Figure 5. Therefore, if such a temperature increase is allowed, a stack containing five-times more wafers will be possible with bumpless TSV interconnects. Microbump Bumpless Interconnection Rth2—8 2. If a cubic space can be utilized, device layers can be stacked. In case of Flash nonvolatile memory, having 3D-transitor memory cells, terabit-capacity memory can be realized by stacking only 4 or 8 wafers. ITRS production 1 Production year risk start.

DRAM capacity in the 3D case corresponds to the number of stacked dies, assuming that redundancy is eliminated by cell blocks at each layer. By using multiple channel or memory mat for designing the architecture of the memory layout, the defect area will be limited at the channel region. Thus, the memory capacity within one memory die, excluding failed channels, is maintained.

In other words, when one memory die has multiple channels, the loss of memory capacity would be reduced even at the same defect density. As the bumpless TSVs and ultrathin WOW process enable interconnections with high density at the minimum physical length, those channels are verti- cally connected to the controller independently, as shown in Figure 5. As the multichannel design supports further.

Here, one memory die has 16 channels CH0 to CH15 in total. Bumpless intercon- nects are connected independently to the controller die from each channel of the DRAM layers. Defects, however, will become a bottleneck due to the difficulty in control- ling defects. For instance, subnanometer roughness control of the gate width along the gate line must be achieved after patterning. This is because, as scaling proceeds, the so-called stealth defects invisible defects increase pro- portionally, and the control of process variations approaches its limit.

3D Integration in VLSI Circuits Implementation Technologies and Applications

When stealth defects become dominant, variations cannot be improved statisti- cally and thus die yield deceases with scaling. Considering the technology roadmap, the issues of scaling technology and technology for fabricating three-dimensional structures are often discussed separately; for example, scaling belongs to the front-end wafer process, whereas 3DI belongs to back- end packaging. However, these two technologies are not always mutually exclusive. Scaling would be relieved of the stringent requirements by co-engineering using three-dimensional WOW technology combined with mass-production technology.

In other words, a sufficiently long learning period would be ensured, and further cost reductions could be expected by concentrating on the control of variations among generations and shortening the process. As cost reduction requires the adoption of advanced lithography technology, advanced lithography and peripheral support facilities account for one-third to one-fourth of the total cost of a manufacturing line.

In combination with three-dimensional stacking to overcome such problems, a roadmap toward high-density integration backed up by production costs can be made. This is because the capital investment for 3D wafer processes is not high compared to that of lithography. Moreover, keeping the wafer shape as-is for stacking ensures compatibility with manufacturing facilities in front-end process- ing and helps utilize the mature process technologies developed for wafer processing. Therefore, future semiconductor manufactur- ing is expected to advance with a roadmap in which the number of stacked wafers, the wafer thickness, and the number of TSV interconnects serve as indices, as shown in Figure 5.

Conventional scaling will face difficulties such as physical limits and inability to minimize costs, whereas 3D integration will become superior to scaling. By combining conventional two- dimensional integration 2DI with three-dimensional stacking to overcome such problems associated with device scaling and increasing wafer size, it is possible to make a roadmap toward high-density integration backed up by production costs. As bumpless interconnects using TSVs can be connected directly to the upper and lower substrates by self- alignment, the package thickness can be reduced by an amount equivalent to the thickness of electrodes, such as bumps, which are not necessary when bumpless interconnects are used in combination with wafer thinning.

At the same time, size reduction of the finished shape allows the wiring between the upper and lower chips to be made shorter, which reduces the total wiring impedance and makes it easier to ensure high bandwidth with higher energy efficiency. Furthermore, by stacking wafers, high-density integration and system block arrangements become more flexible, and the design space is extended. Cisco, IoT is a single technology transition, while IoE comprises many technology transitions including IoT. Ohba, N. Maeda, H. Kitada, K. Fujimoto, K. Suzuki, T. Learn more about the wireless network of the future in our feature.

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Please note that there might be constraints on site display and usability. For the best experience we suggest that you download the newest version of a supported browser:. Siemens ingenuity for life. The Atlas of Digitalization Discover the digitalization readiness and potential of six vibrant cities through the lenses of sustainability, mobility and opportunity. Hence deeper layers, vias and other structures. Many TEM photos are given, which greatly helps the reader understand what is being made. Very little specialised background is expected of the reader. You can be an undergraduate in the sciences or engineering, and easily understand the text.

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